FNB35060T6S - onsemi

Description: 600 V - 50 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; Single-Grounded Power Supply; LVIC Temperature-Sensing Built-In for Temperature Monitoring; Isolation Rating: 2500 Vrms / 1 min.; Very Low Thermal Resistance using AlN DBC Substrate