FOD3184 - onsemi

Description: 3A minimum peak output current for medium power MOSFET/IGBT; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); Safety and regulatory approvals; Guaranteed operating temperature range of -40°C to 100°C; Minimum clearance distance of 8.0mm (Option T); Fast switching speed; Fast output rise/fall time; Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs; Minimum insulation thickness of 0.5mm; IEC60747-5-2, 1,41