FQB19N20LTM - onsemi
Description: Low Crss ( Typ. 30pF); Low level gate drive requirement allowing direct operation from logic drivers; Low gate charge ( Typ. 27nC); 100% avalanche tested; 21A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 10.5A
Description: Low Crss ( Typ. 30pF); Low level gate drive requirement allowing direct operation from logic drivers; Low gate charge ( Typ. 27nC); 100% avalanche tested; 21A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 10.5A
