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FQB19N20LTM - onsemi

Description: Low Crss ( Typ. 30pF); Low level gate drive requirement allowing direct operation from logic drivers; Low gate charge ( Typ. 27nC); 100% avalanche tested; 21A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 10.5A

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FQB19N20LTM Details

  • Manufacturer Part Number:

    FQB19N20LTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB19N20LTM Frequently Asked Questions (FAQs)

  • The maximum operating frequency of FQB19N20LTM is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the layout guidelines provided in the application note.
  • The maximum junction temperature of FQB19N20LTM is 150°C, but it is recommended to operate the device at a junction temperature below 125°C for optimal performance and reliability.
  • Yes, FQB19N20LTM is rated for operation up to 150°C, but the device's performance and reliability may degrade at high temperatures. It is recommended to derate the device's performance and follow the thermal management guidelines provided in the application note.
  • It is recommended to use a voltage supervisor or a voltage monitor to detect overvoltage and undervoltage conditions and to take appropriate action to protect the device. Additionally, it is recommended to use a TVS diode or a zener diode to clamp the input voltage to a safe level.

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FQB19N20LTM Overview

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Image Part Number Model
Part Image FQB19N20LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FQB19N20LTM_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB