FQB19 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
FQB19N20TM onsemi This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	N-Channel 200 V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount TO-263 (D2PAK) -55°C ~ 150°C	Other	FQB19N20TM	3D model not available Symbol and footprint available 2	1 Download Model
FQB19N20L onsemi	1	N-Channel QFET® MOSFET200 V, 21 A, 140 mΩ	Other	FQB19N20L	3D model not available Symbol and footprint available 2	1 Download Model
FQB19N10L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N10L	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N10LTM Rochester Electronics LLC	1	19A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		FQB19N10LTM	3D model not available Symbol and footprint not available 0	0 Build or Request

FQB19N10LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N10LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N10TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N10TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20TM Rochester Electronics LLC	1	19.4A, 200V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		FQB19N20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N20	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20CTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB19N20CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB19N20C	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20CTM onsemi	1	Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB19N20CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20LTM onsemi	1	Low Crss ( Typ. 30pF); Low level gate drive requirement allowing direct operation from logic drivers; Low gate charge ( Typ. 27nC); 100% avalanche tested; 21A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 10.5A		FQB19N20LTM	3D model available Symbol and footprint not available 1	1 Download Model
FQB19N20C onsemi	1	Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB19N20C	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 21A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N20L	3D model not available Symbol and footprint not available 0	0 Build or Request

FQB19N10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N10	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20LTM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N20LTM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FQB19N20LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 21A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB19N20LTM	3D model not available Symbol and footprint not available 0	0 Build or Request

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