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FQB19N20TM - onsemi

Description: N-Channel 200 V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount TO-263 (D2PAK) -55°C ~ 150°C

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PCB Footprints
FQB19N20TM - onsemi PCB footprint - Other - Other - TO263 (D2PAK)_2026
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FQB19N20TM Details

  • Manufacturer Part Number:

    FQB19N20TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    19.4 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB19N20TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQB19N20TM is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity. Place the device on a heat sink or a thermal pad, and use thermal vias to dissipate heat. Keep the PCB layout compact and symmetrical to minimize thermal gradients.
  • To protect the FQB19N20TM from ESD, use an ESD wrist strap or mat when handling the device. Ensure the PCB has ESD protection diodes or resistors, and use a conformal coating to prevent moisture and humidity from affecting the device.
  • Store the FQB19N20TM in its original packaging or an anti-static bag. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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FQB19N20TM Overview

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Part Image FQB19N20TM Rochester Electronics LLC

19.4A, 200V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3

Part Image FQB19N20 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB