FQB27P06TM - onsemi
Description: Low gate charge ( Typ.33nC); 100% avalanche tested; Low Crss ( Typ. 120pF); 175°C maximum junction temperature rating; -27A, -60V, RDS(on) =70mΩ(Max.) @VGS = -10 V, ID = -13.5A
Description: Low gate charge ( Typ.33nC); 100% avalanche tested; Low Crss ( Typ. 120pF); 175°C maximum junction temperature rating; -27A, -60V, RDS(on) =70mΩ(Max.) @VGS = -10 V, ID = -13.5A
