FQB33N10TM - onsemi
Description: 100% avalanche tested; Low gate charge ( Typ. 38nC); 33A, 100V, RDS(on) = 52mΩ(Max.) @VGS = 10 V, ID = 16.5A; 175°C maximum junction temperature rating; Low Crss ( Typ. 62pF)
Description: 100% avalanche tested; Low gate charge ( Typ. 38nC); 33A, 100V, RDS(on) = 52mΩ(Max.) @VGS = 10 V, ID = 16.5A; 175°C maximum junction temperature rating; Low Crss ( Typ. 62pF)
