FQB9P25TM - onsemi
Description: Low Crss (Typ. 27 pF); Low Gate Charge (Typ. 29 nC); 100% Avalanche Tested; -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A
Description: Low Crss (Typ. 27 pF); Low Gate Charge (Typ. 29 nC); 100% Avalanche Tested; -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A
