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FQB9P25TM - onsemi

Description: Low Crss (Typ. 27 pF); Low Gate Charge (Typ. 29 nC); 100% Avalanche Tested; -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A

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PCB Footprints
FQB9P25TM - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FQB9P25TM - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FQB9P25TM Details

  • Manufacturer Part Number:

    FQB9P25TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    650 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.62 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    37.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB9P25TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQB9P25TM is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator or biasing circuit to maintain stable operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with thermal vias, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe tools, and storing the device in an ESD-safe environment. Follow the recommended ESD protection guidelines in the datasheet and application notes.
  • The FQB9P25TM has a unique combination of high voltage, high current, and low RDS(on) compared to other devices in the same family. Consult the datasheet and application notes for specific comparisons and selection guides.

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FQB9P25TM Overview

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Part Image FQB9P25TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FQB9P25 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB