FQB9P Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQB9P25TM onsemi	1	Low Crss (Typ. 27 pF); Low Gate Charge (Typ. 29 nC); 100% Avalanche Tested; -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A	Other	FQB9P25TM	3D model available Symbol and footprint available 3	1 Download Model
	FQB9P25TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB9P25TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB9P25 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB9P25	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB9P25TM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB9P25TM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

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