FQD16N25CTM - onsemi
Description: 100% avalanche testedcapability; Low gate charge ( Typ. 41nC); Low Crss ( Typ. 68pF); 16A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
Description: 100% avalanche testedcapability; Low gate charge ( Typ. 41nC); Low Crss ( Typ. 68pF); 16A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
