FQD17P06TM - onsemi
Description: -12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A; Low gate charge ( Typ. 21nC); Low Crss ( Typ. 80pF); 100% avalanche tested
Description: -12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A; Low gate charge ( Typ. 21nC); Low Crss ( Typ. 80pF); 100% avalanche tested
