FQD1N80TM - onsemi
Description: Low gate charge ( Typ. 5.5nC); Low Crss ( Typ. 2.7pF); 1A, 800V, RDS(on) = 20Ω(Max.) @VGS = 10 V, ID = 0.5A; 100% avalanche tested
Description: Low gate charge ( Typ. 5.5nC); Low Crss ( Typ. 2.7pF); 1A, 800V, RDS(on) = 20Ω(Max.) @VGS = 10 V, ID = 0.5A; 100% avalanche tested
