FQD2N100TM - onsemi
Description: 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A; Low gate charge ( Typ. 12nC); 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 5pF)
Description: 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A; Low gate charge ( Typ. 12nC); 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 5pF)
