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FQD2N100TM - onsemi

Description: 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A; Low gate charge ( Typ. 12nC); 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 5pF)

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FQD2N100TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FQD2N100TM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FQD2N100TM Details

  • Manufacturer Part Number:

    FQD2N100TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    1.6 A

  • Drain-source On Resistance-Max:

    9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    6.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD2N100TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQD2N100TM is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings specified in the datasheet. Typically, Vgs should be between 2-5V and Vds should be between 10-100V, depending on the application.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the device away from other heat sources and ensure good airflow around the device.
  • Yes, the FQD2N100TM can be used in switching applications, but it's essential to consider the device's switching frequency, voltage, and current ratings. The device is suitable for low-frequency switching applications (up to 100 kHz) with a maximum voltage of 100V and a maximum current of 2A.
  • To protect the FQD2N100TM from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and components are properly grounded. Use ESD-sensitive handling procedures during assembly and storage.

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FQD2N100TM Overview

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