FQD2N Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A; Low gate charge ( Typ. 12nC); 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 5pF) Other FQD2N100TM 1 Download Model
Part Image Part Image 0 Fairchild FQD2N90TF N-channel MOSFET Transistor, 1.7 A, 900 V, 3-Pin D-PAK Other FQD2N90TF 1 Download Model
Part Image Part Image 1 N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω, TO-252 3L (DPAK), 30000-TAPE REEL FQD2N60CTM_WS 0 Build or Request
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FQD2N60CTM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N60CTM 0 Build or Request
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FQD2N60CTM Rochester Electronics LLC
1 1.9A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 FQD2N60CTM 0 Build or Request
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FQD2N60C onsemi
1 Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N60C 0 Build or Request
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FQD2N80TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N80TM 0 Build or Request
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FQD2N90 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N90 0 Build or Request
Part Image Part Image 1 RoHS compliant; 1.9A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 0.95A; 100% avalanche tested; Low Crss ( Typ. 4.3pF); Low gate charge ( Typ. 8.5nC) FQD2N60CTM 1 Download Model
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FQD2N90TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N90TM 0 Build or Request
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FQD2N100 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 FQD2N100 0 Build or Request
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FQD2N60CTF Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET FQD2N60CTF 0 Build or Request
Part Image Part Image 1 Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK, TO-252 3L (DPAK), 2500-REEL FQD2N60CTM-WS 0 Build or Request
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FQD2N60C Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N60C 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N80TM 0 Build or Request
Part Image Part Image 1 RoHS compliant; Low gate charge ( Typ. 12nC); Low Crss ( Typ. 5.5pF); 1.7A, 900V, RDS(on) = 7.2Ω(Max.) @VGS = 10 V, ID = 0.85A; 100% avalanche tested FQD2N90TM 1 Download Model
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FQD2N80 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N80 0 Build or Request
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FQD2N100TM Rochester Electronics LLC
1 1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 FQD2N100TM 0 Build or Request
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FQD2N100TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N100TM 0 Build or Request
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FQD2N60CTM_WS Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 FQD2N60CTM_WS 0 Build or Request
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FQD2N30 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.7A I(D), 300V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N30 0 Build or Request
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FQD2N60TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N60TM 0 Build or Request
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FQD2N90TM Rochester Electronics LLC
1 1.7A, 900V, 7.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD2N90TM 0 Build or Request
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FQD2N50TM Rochester Electronics LLC
1 1.6A, 500V, 5.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD2N50TM 0 Build or Request
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FQD2N80TF Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD2N80TF 0 Build or Request
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