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FQD2N90TM - onsemi

Description: RoHS compliant; Low gate charge ( Typ. 12nC); Low Crss ( Typ. 5.5pF); 1.7A, 900V, RDS(on) = 7.2Ω(Max.) @VGS = 10 V, ID = 0.85A; 100% avalanche tested

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FQD2N90TM Details

  • Manufacturer Part Number:

    FQD2N90TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    7.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    6.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD2N90TM Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FQD2N90TM is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum voltage rating is 900V and the maximum current rating is 2A. However, it's recommended to consult the application notes and design guidelines provided by onsemi for specific SOA guidelines.
  • Proper thermal management is crucial for the FQD2N90TM. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The recommended operating junction temperature is -55°C to 150°C. Consult the datasheet for thermal resistance values and follow onsemi's application notes for thermal design guidelines.
  • The recommended gate drive voltage for the FQD2N90TM is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and onsemi's application notes for more information on gate drive requirements.
  • To protect the FQD2N90TM from electrostatic discharge (ESD), follow proper handling and storage procedures. Use anti-static wrist straps, mats, and packaging materials. Ensure that the device is properly grounded during handling and assembly. Consult the datasheet and onsemi's application notes for more information on ESD protection.
  • For optimal performance and reliability, follow good PCB design practices for the FQD2N90TM. Keep the power traces short and wide, and use a solid ground plane. Ensure proper decoupling and bypassing of the device. Consult the datasheet and onsemi's application notes for more information on PCB design guidelines.

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FQD2N90TM Overview

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Part Image FQD2N90TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD2N90 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252