FQD8P10TM - onsemi
Description: Low Crss ( Typ. 30pF); 100% avalanche tested; Low gate charge ( Typ. 12nC); -6.6A, -100V, RDS(on) = 530mΩ(Max.) @VGS = -10 V, ID = -3.3A
Description: Low Crss ( Typ. 30pF); 100% avalanche tested; Low gate charge ( Typ. 12nC); -6.6A, -100V, RDS(on) = 530mΩ(Max.) @VGS = -10 V, ID = -3.3A
