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FQD8P10TM - onsemi

Description: Low Crss ( Typ. 30pF); 100% avalanche tested; Low gate charge ( Typ. 12nC); -6.6A, -100V, RDS(on) = 530mΩ(Max.) @VGS = -10 V, ID = -3.3A

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FQD8P10TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FQD8P10TM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FQD8P10TM Details

  • Manufacturer Part Number:

    FQD8P10TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.6 A

  • Drain-source On Resistance-Max:

    0.53 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    26.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD8P10TM Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQD8P10TM is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal impedance and maximum junction temperature.
  • To ensure proper cooling, consider the device's thermal impedance (RθJA) and maximum junction temperature (Tj). Use a heat sink with a thermal resistance (RθSA) that is less than or equal to the device's RθJA. Also, ensure good thermal contact between the device and heat sink, and consider using thermal interface materials to minimize thermal resistance.
  • The recommended gate drive voltage for the FQD8P10TM is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and power consumption.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using ground planes, and minimizing loop areas. Also, consider using EMI filters, shielding, and snubbers to reduce electromagnetic radiation.
  • The maximum allowed voltage transient for the FQD8P10TM is not explicitly stated in the datasheet. However, as a general rule, it's recommended to limit voltage transients to less than 20% of the device's maximum voltage rating to prevent damage or malfunction.

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FQD8P10TM Overview

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Part Image FQD8P10 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for FQD8P10TM, check out Findchips.com