Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FQD8P10TM-F085 - onsemi

Description: RoHS Compliant; Fast switching; Qualified to AEC Q101; 100% avalanche tested; Low Crss ( typical 30 pF); Low gate charge ( typical 12 nC); Improved dv/dt capability ; 6.6A, -100V, RDS(on) = 0.53O @VGS = -10 V

Download FQD8P10TM-F085 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FQD8P10TM-F085 - onsemi - PCB symbol
click to zoom
PCB Footprints
FQD8P10TM-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
click to zoom
3D Models
FQD8P10TM-F085 - onsemi - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
click to zoom

FQD8P10TM-F085 Details

  • Manufacturer Part Number:

    FQD8P10TM-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    ROHS COMPLIANT, DPAK-3

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.6 A

  • Drain-source On Resistance-Max:

    0.53 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    26.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD8P10TM-F085 Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep high-current paths short. A heat sink or thermal pad can be used to dissipate heat. Consult onsemi's application notes for specific guidance.
  • Follow onsemi's guidelines for PCB layout, use shielding, and implement filtering and decoupling techniques to minimize EMI. Ensure proper grounding and use EMI-absorbing materials if necessary.
  • The device is designed to meet automotive reliability standards. However, lifespan expectations depend on factors like operating conditions, temperature, and usage patterns. Consult onsemi's reliability reports and application notes for more information.
  • The device is rated for operation up to 150°C. Derating is necessary for high-temperature operation. Consult the datasheet and onsemi's application notes for specific guidance on thermal derating and high-temperature operation.
  • Follow onsemi's recommended testing procedures, including characterization, environmental testing, and reliability testing. Validate the device's performance using industry-standard testing methods and tools.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQD8P10TM-F085 Overview

Use the download button to access the FQD8P10TM-F085 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQD8P, or try a keyword search, such as Power Field-Effect Transistors

Suggested Parts

If you searched for FQD8P10TM-F085, you might also be interested in these parts:
Part Number
INA280A2QDCKRQ1
FDB9503L_F085
ADA4522-2ARZ
FDB9506L-F085
IRF610PBF
510ABA100M000AAG
510ABA156M250AAG
8N3D085EC-1179CDI
8N3Q001EG-0001CDI8

Parts related to FQD8P10TM-F085

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

FQD8P10TM-F085 Alternates

Showing results

Image Part Number Model
Part Image FQD8P10TM onsemi

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image FQD8P10TM_F085 onsemi

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®, TO-252 3L (DPAK), 30000-TAPE REEL
Part Image FQD8P10TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image FQD8P10TM-SB82052 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Part Image FQD8P10 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
For a full list of alternate parts for FQD8P10TM-F085, check out Findchips.com