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FQD8P10TM_F085 - onsemi

Description: Fairchild FQD8P10TM_F085 P-channel MOSFET Transistor, 6.6 A, -100 V, 3-Pin DPAK

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FQD8P10TM_F085 - onsemi PCB footprint - Other - Other - FQD8P10TM_F085-3
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FQD8P10TM_F085 Details

  • Manufacturer Part Number:

    FQD8P10TM_F085

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Manufacturer Package Code:

    TO252A03

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.6 A

  • Drain-source On Resistance-Max:

    0.53 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    26.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD8P10TM_F085 Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep high-current paths short. A heat sink or thermal pad can be used to dissipate heat. Consult onsemi's application notes for specific guidance.
  • Follow onsemi's guidelines for PCB layout, use shielding, and implement filtering and decoupling techniques to minimize EMI. Ensure proper grounding and use EMI-absorbing materials if necessary.
  • The device is designed to meet automotive reliability standards. However, lifespan expectations depend on factors like operating conditions, temperature, and usage patterns. Consult onsemi's reliability reports and application notes for more information.
  • The device is rated for operation up to 150°C. Derating is necessary for high-temperature operation. Consult the datasheet and onsemi's application notes for specific guidance on thermal derating and high-temperature operation.
  • Follow onsemi's recommended testing procedures, including characterization, environmental testing, and reliability testing. Validate the device's performance using industry-standard testing methods and tools.

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FQD8P10TM_F085 Overview

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Part Image FQD8P10TM onsemi

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD8P10TM-F085 onsemi

-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified

Part Image FQD8P10TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD8P10TM-SB82052 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

Part Image FQD8P10 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for FQD8P10TM_F085, check out Findchips.com