FQN1N50CTA - onsemi
Description: Low gate charge ( Typ. 4.9nC); 100% avalanche tested; Low Crss ( Typ. 4.1pF); 0.38A, 500V, RDS(on) = 6Ω(Max.) @VGS = 10 V, ID = 0.19A
Description: Low gate charge ( Typ. 4.9nC); 100% avalanche tested; Low Crss ( Typ. 4.1pF); 0.38A, 500V, RDS(on) = 6Ω(Max.) @VGS = 10 V, ID = 0.19A
