Part Image

FQN1N50CTA - onsemi

Description: Low gate charge ( Typ. 4.9nC); 100% avalanche tested; Low Crss ( Typ. 4.1pF); 0.38A, 500V, RDS(on) = 6Ω(Max.) @VGS = 10 V, ID = 0.19A

Download FQN1N50CTA Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQN1N50CTA - onsemi PCB footprint - Other - Other - TO−92 3LD 4.75x4.80 CASE 135AV ISSUE O
click to zoom
3D Models
FQN1N50CTA - onsemi  - 3D model - Other - TO−92 3LD 4.75x4.80 CASE 135AV ISSUE O
click to zoom

FQN1N50CTA Details

  • Manufacturer Part Number:

    FQN1N50CTA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO−92 3LD 4.75x4.80

  • Manufacturer Package Code:

    135AV

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    44.4 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    0.38 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.1 pF

  • JEDEC-95 Code:

    MS-013AC

  • JESD-30 Code:

    O-PBCY-W3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.89 W

  • Power Dissipation-Max (Abs):

    0.89 W

  • Pulsed Drain Current-Max (IDM):

    3.04 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    60 ns

FQN1N50CTA Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FQN1N50CTA is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature of 150°C.
  • The maximum allowed voltage transient for FQN1N50CTA is 500V for a duration of 10ms, as specified in the datasheet. Exceeding this may cause device damage or failure.
  • While FQN1N50CTA is suitable for high-frequency switching applications, it's essential to consider the device's switching losses, which increase with frequency. Ensure proper thermal management and consider using a device with lower switching losses if high-frequency operation is required.
  • To protect FQN1N50CTA from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure all personnel handling the device wear ESD-protective wrist straps or clothing.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQN1N50CTA Overview

Use the download button to access the FQN1N50CTA schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQN1N, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FQN1N50CTA

Showing 0 results