FQP11N40C - onsemi
Description: Low gate charge ( Typ. 28nC); 100% avalanche tested; Low Crss ( Typ. 85pF); 10.5A, 400V, RDS(on) = 530mΩ(Max.) @VGS = 10 V, ID = 5.25A
Description: Low gate charge ( Typ. 28nC); 100% avalanche tested; Low Crss ( Typ. 85pF); 10.5A, 400V, RDS(on) = 530mΩ(Max.) @VGS = 10 V, ID = 5.25A
