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FQP11N40C - onsemi

Description: Low gate charge ( Typ. 28nC); 100% avalanche tested; Low Crss ( Typ. 85pF); 10.5A, 400V, RDS(on) = 530mΩ(Max.) @VGS = 10 V, ID = 5.25A

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PCB Footprints
FQP11N40C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2023-1
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3D Models
FQP11N40C - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2023-1
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FQP11N40C Details

  • Manufacturer Part Number:

    FQP11N40C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    10.5 A

  • Drain-source On Resistance-Max:

    0.53 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP11N40C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP11N40C is -55°C to 150°C.
  • To ensure proper biasing, the FQP11N40C requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) between 10V and 400V.
  • The maximum current rating for the FQP11N40C is 11A.
  • To protect the FQP11N40C from ESD, handle the device with an anti-static wrist strap or mat, and avoid touching the pins or leads.
  • The recommended storage temperature range for the FQP11N40C is -40°C to 125°C.

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FQP11N40C Overview

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