FQP11 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQP11N40C onsemi	1	Low gate charge ( Typ. 28nC); 100% avalanche tested; Low Crss ( Typ. 85pF); 10.5A, 400V, RDS(on) = 530mΩ(Max.) @VGS = 10 V, ID = 5.25A	Transistor Outline, Vertical	FQP11N40C	3D model available Symbol and footprint available 3	1 Download Model
	FQP11P06 onsemi	1	Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11P06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11N40 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11N40	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11N40TSTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11N40TSTU	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQP11P06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11P06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11N40 Rochester Electronics LLC	1	11.4A, 400V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN		FQP11N40	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11P06J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11P06J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11P06 Rochester Electronics LLC	1	11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN		FQP11P06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11N40J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQP11N40J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11N40C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11N40C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP11N50CF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP11N50CF	3D model not available Symbol and footprint not available 0	0 Build or Request

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