FQP12P20 - onsemi
Description: Low gate charge ( Typ. 31nC); -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 30pF)
Description: Low gate charge ( Typ. 31nC); -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 30pF)
