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FQP12P20 - onsemi

Description: Low gate charge ( Typ. 31nC); -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested; RoHS Compliant; Low Crss ( Typ. 30pF)

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PCB Footprints
FQP12P20 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQP12P20
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FQP12P20 - onsemi  - 3D model - Transistor Outline, Vertical - FQP12P20
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FQP12P20 Details

  • Manufacturer Part Number:

    FQP12P20

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks, 5 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    11.5 A

  • Drain-source On Resistance-Max:

    0.47 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    46 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP12P20 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP12P20 is typically defined by the voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA to ensure reliable operation.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized. A gate driver IC or a dedicated gate drive circuit can help achieve this. Additionally, consider using a low-inductance layout and minimizing the PCB trace lengths to reduce parasitic inductance.
  • For optimal thermal management, ensure good thermal contact between the device and a heat sink or PCB. Apply a thermal interface material (TIM) to fill any gaps. Consider using a heat sink with a thermal resistance of 10°C/W or lower. Also, ensure good airflow around the device to prevent thermal hotspots.
  • Yes, the FQP12P20 is suitable for high-frequency switching applications. However, be aware of the device's switching characteristics, such as the rise and fall times, and ensure the gate drive circuit is optimized for high-frequency operation. Additionally, consider the PCB layout and component selection to minimize parasitic inductance and capacitance.
  • To protect the FQP12P20 from ESD, handle the device by the body or use an ESD wrist strap. Ensure the PCB and components are designed with ESD protection in mind, such as using ESD-protection diodes or resistors. Also, consider using a conformal coating or potting compound to protect the device from environmental factors.

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FQP12P20 Overview

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