FQP13N10 - onsemi
Description: Low Crss ( Typ. 20pF); Low gate charge ( Typ. 12nC); 12.8A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 6.4A; 175°C maximum junction temperature rating; 100% avalanche tested
Description: Low Crss ( Typ. 20pF); Low gate charge ( Typ. 12nC); 12.8A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 6.4A; 175°C maximum junction temperature rating; 100% avalanche tested
