FQT13N06LTF - onsemi
Description: Low gate charge ( Typ. 4.8nC); 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A; 100% avalanche tested; Low Crss ( Typ. 17pF)
Description: Low gate charge ( Typ. 4.8nC); 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A; 100% avalanche tested; Low Crss ( Typ. 17pF)
