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FQT13N06LTF - onsemi

Description: Low gate charge ( Typ. 4.8nC); 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A; 100% avalanche tested; Low Crss ( Typ. 17pF)

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PCB Footprints
FQT13N06LTF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT13N06LTF
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FQT13N06LTF - onsemi  - 3D model - SOT223 (3-Pin) - FQT13N06LTF
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FQT13N06LTF Details

  • Manufacturer Part Number:

    FQT13N06LTF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    SOT-223, 4 PIN

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.8 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    11.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    215 ns

FQT13N06LTF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQT13N06LTF can withstand is 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The recommended gate resistor value for the FQT13N06LTF is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the FQT13N06LTF is qualified to automotive and industrial standards, making it suitable for high-reliability applications. However, it's essential to follow proper design and manufacturing guidelines to ensure the device meets the required reliability standards.
  • To protect the FQT13N06LTF from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB and assembly process follow ESD-safe guidelines.

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FQT13N06LTF Overview

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