FQT13 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQT13N06LTF onsemi	1	Low gate charge ( Typ. 4.8nC); 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A; 100% avalanche tested; Low Crss ( Typ. 17pF)	SOT223 (3-Pin)	FQT13N06LTF	3D model available Symbol and footprint available 3	1 Download Model
	FQT13N06L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06TF-SB82070 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FQT13N06TF-SB82070	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQT13N06LTF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06TF onsemi	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06L onsemi	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		FQT13N06L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06S62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06TF Rochester Electronics LLC	1	2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN		FQT13N06TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06LS62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06LS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06LTF Rochester Electronics LLC	1	2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN		FQT13N06LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06LL99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06LL99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06 onsemi	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06LD84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06LD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQT13N06L99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT13N06D84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQT13N06D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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