FQT5P10TF - onsemi
Description: 100% avalanche tested; Low gate charge ( Typ. 6.3nC); Low Crss ( Typ. 18pF); -1.0A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -0.5A
Description: 100% avalanche tested; Low gate charge ( Typ. 6.3nC); Low Crss ( Typ. 18pF); -1.0A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -0.5A
