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FQT5P10TF - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 6.3nC); Low Crss ( Typ. 18pF); -1.0A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -0.5A

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PCB Footprints
FQT5P10TF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 CASE 318H
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3D Models
FQT5P10TF - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 CASE 318H
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FQT5P10TF Details

  • Manufacturer Part Number:

    FQT5P10TF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    SOT-223, 3 PIN

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    1.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQT5P10TF Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and consider using a heat sink with a thermal resistance of less than 10°C/W.
  • The maximum allowed voltage transient is 20% above the maximum rated voltage (Vds) for a duration of less than 100 ms. Exceeding this may cause damage to the device.
  • Yes, but ensure that the device is properly snubbed to prevent voltage ringing and oscillations. A snubber circuit with a series R-C network can help reduce ringing and EMI.
  • Use a shielded enclosure, keep the device away from sensitive circuits, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Also, ensure proper PCB layout and decoupling to reduce radiated emissions.

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FQT5P10TF Overview

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