FQT5P Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQT5P10TF onsemi	1	100% avalanche tested; Low gate charge ( Typ. 6.3nC); Low Crss ( Typ. 18pF); -1.0A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -0.5A	SOT223 (3-Pin)	FQT5P10TF	3D model available Symbol and footprint available 3	1 Download Model
	FQT5P10 onsemi	1	Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQT5P10	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT5P10D84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQT5P10D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT5P10TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQT5P10TF	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQT5P10L99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQT5P10L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT5P10S62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQT5P10S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQT5P10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		FQT5P10	3D model not available Symbol and footprint not available 0	0 Build or Request

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