GANB4R8-040CBAZ - Nexperia
Description: GANB4R8-040CBA - 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)@en-us
Description: GANB4R8-040CBA - 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)@en-us
