IMBG65R260M1HXTMA1 - Infineon
Description: 650V CoolSiC M1SiC Trench Power Device VDS max: 650V, RDS (on) max: 346mΩ, Qg,typ: 6nC, IDm: 19A, Eoss @ 400V: 3.4µJ, SMT, Package: PG-TO263-7-12
Description: 650V CoolSiC M1SiC Trench Power Device VDS max: 650V, RDS (on) max: 346mΩ, Qg,typ: 6nC, IDm: 19A, Eoss @ 400V: 3.4µJ, SMT, Package: PG-TO263-7-12
