IPLK80R1K2P7 - Infineon
Description: N-Channel MOSFET VDS @ Tj=25°C= 800V, RDS(on),max= 1.2Ω, Qg,typ= 11nC, ID= 4.5A, Eoss @ 500V= 1.0µJ, VGS(th),typ= 3V, Package ThinPAK 5x6 SMD
Description: N-Channel MOSFET VDS @ Tj=25°C= 800V, RDS(on),max= 1.2Ω, Qg,typ= 11nC, ID= 4.5A, Eoss @ 500V= 1.0µJ, VGS(th),typ= 3V, Package ThinPAK 5x6 SMD
