IPN70R1K2P7S - Infineon
Description: Transistor=N-Channel Power MOSFET, IDpuls=9.8A, Mounting=SMT, Temperature=-40°C 150°C, Ptot=6.3W, Package=SOT-223, QG=13nC, Qgd=6.5nC, RDS=1000mΩ, RthJA=75K/W, VDS=700V, VGS=2.5V 3.5
Description: Transistor=N-Channel Power MOSFET, IDpuls=9.8A, Mounting=SMT, Temperature=-40°C 150°C, Ptot=6.3W, Package=SOT-223, QG=13nC, Qgd=6.5nC, RDS=1000mΩ, RthJA=75K/W, VDS=700V, VGS=2.5V 3.5