IPN70R900P7S - Infineon
Description: N-Channel Power MOSFET VDS max: 700V, RDS (on) max: 0.9Ω, Qg,typ: 6.8nC, ID,pulse: 12.8A, Eoss @ 400V: 0.9µJ, SMT, Package: PG-SOT223
Description: N-Channel Power MOSFET VDS max: 700V, RDS (on) max: 0.9Ω, Qg,typ: 6.8nC, ID,pulse: 12.8A, Eoss @ 400V: 0.9µJ, SMT, Package: PG-SOT223
