IPN95R2K0P7 - Infineon
Description: 950V CoolMOS P7 SJ Power Device, VDS @ Tj=25°C-950V, RDS(on),max-2Ω, Qg,typ-10nc, ID-4A, Eoss @ 500V-0.9µJ, VGS(th),typ-3V
Description: 950V CoolMOS P7 SJ Power Device, VDS @ Tj=25°C-950V, RDS(on),max-2Ω, Qg,typ-10nc, ID-4A, Eoss @ 500V-0.9µJ, VGS(th),typ-3V
