LM2005DR - Texas Instruments

Description: Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 115-ns typical propagation delay