MASTERGAN7TR - STMicroelectronics
Description: 650 V enhancement mode GaN High power density half-bridge with high voltage driver 270 mΩ 6 A 9x9x1 mm QFN -40 °C to 125 °C
Description: 650 V enhancement mode GaN High power density half-bridge with high voltage driver 270 mΩ 6 A 9x9x1 mm QFN -40 °C to 125 °C
