MC14511BDR2G - onsemi

Description: Chip Complexity: 216 FETs or 54 Equivalent Gates; High-Current Sourcing Outputs (Up to 25 mA); Latch Storage of Code; Time Share (Multiplexing) Facility; Lamp Test Provision; Low Logic Circuit Power Dissipation; Supply Voltage Range = 3.0 V to 18 V; Lamp Intensity Modulation Capability; Triple Diode Protection on all Inputs; Readout Blanking on all Illegal Input Combinations; Blanking Input; Capable of Driving Two Low-power TTL Loads, One Low-power Schottky TTL Load or Two HTL Loads Over the Rated Temperatu