MJ11028G - onsemi

Description: Junction Temperature to +200°C; Monolithic Construction with Built-In Base-Emitter Shunt Resistor; Curves to 100 A (Pulsed); Diode Protection to Rated IC; High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc; Pb-Free Packages are Available