MJE243G - onsemi

Description: High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc; High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 - MJE243, MJE253; Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB; High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) MJE243, MJE253; Pb-Free Packages are Available