NCP81075DR2G - onsemi

Description: Drives two N-Channel MOSFETs in High & Low Side; Integrated Bootstrap Diode for High Side Gate Drive; Bootstrap Supply Voltage Range up to 180V; 4A Source, 4A Sink Output Current Capability; Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns; Wide Supply Voltage Range 8.5V to 20V; Fast Propagation Delay Times (Typ. 20 ns); 2 ns Delay Matching (Typical); Under-Voltage Lockout (UVLO) Protection for Drive Voltage; Operating Junction Temperature Range of -40°C to 140°C