NTBL050N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(eff.) = 909 pF); Ultra Low Gate Charge (Typ. Qg = 98 nC); Typ. RDS(on) = 40 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.6 Ω