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NTBL050N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(eff.) = 909 pF); Ultra Low Gate Charge (Typ. Qg = 98 nC); Typ. RDS(on) = 40 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.6 Ω

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PCB Footprints
NTBL050N65S3H - onsemi PCB footprint - Other - Other - NTBL050N65S3H-2
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NTBL050N65S3H - onsemi  - 3D model - Other - NTBL050N65S3H-2
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NTBL050N65S3H Details

  • Manufacturer Part Number:

    NTBL050N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    H-PSOF8L 9.90x10.38x2.30, 1.20P

  • Package Description:

    H-PSOF8L, 8 PIN

  • Manufacturer Package Code:

    100DC

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2020-10-19

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    491 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTBL050N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The NTBL050N65S3H has an integrated ESD protection circuit, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
  • Yes, the NTBL050N65S3H is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard and is PPAP (Production Part Approval Process) capable. However, it's essential to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • The recommended gate drive circuits for the NTBL050N65S3H involve using a dedicated gate driver IC or a discrete circuit with a suitable voltage source, resistors, and capacitors. The gate drive circuit should be designed to provide a fast rise and fall time, while also ensuring proper voltage and current limits.

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